FQB27N25TM-F085
Sanyo Semiconductor/onsemi
Copyright@2026 All Rights Reserved
粤ICP备19162589号
Technical Support Cluster Technology
Friend links
Sitemap
APTM100DA18CT1G
Part Number：
APTM100DA18CT1G
Category：
Single FETs, MOSFETs
Manufacturer：
Microsemi Corporation
Description：
MOSFET N-CH 1000V 40A SP1
Packaging：
-
ROHS Status:
-
Currency:
USD
Specifications
- Mounting Type Chassis Mount
- Operating Temperature -40°C ~ 150°C (TJ)
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Current - Continuous Drain (Id) @ 25°C 40A (Tc)
- Vgs (Max) ±30V
- Drain to Source Voltage (Vdss) 1000 V
- Vgs(th) (Max) @ Id 5V @ 2.5mA
- Package / Case SP1
- Supplier Device Package SP1
- Rds On (Max) @ Id, Vgs 216mOhm @ 33A, 10V
- Gate Charge (Qg) (Max) @ Vgs 570 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 14800 pF @ 25 V
- Power Dissipation (Max) 657W (Tc)
