FPF1C2P5BF07A
Sanyo Semiconductor/onsemi
Specifications
- Mounting Type Chassis Mount
- Package / Case Module
- Operating Temperature 150°C (TJ)
- Supplier Device Package Module
- Technology Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss) 1200V (1.2kV)
- Configuration 6 N-Channel (3-Phase Bridge)
- Current - Continuous Drain (Id) @ 25°C 87A (Tc)
- Rds On (Max) @ Id, Vgs 34mOhm @ 50A, 20V
- Vgs(th) (Max) @ Id 2.3V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs 180nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds 2810pF @ 800V
- Power - Max 337W
