FQB27N25TM-F085
Sanyo Semiconductor/onsemi
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Specifications
- Mounting Type Surface Mount
- Package / Case Die
- Supplier Device Package Die
- Operating Temperature -40°C ~ 150°C (TJ)
- FET Type N-Channel
- Drain to Source Voltage (Vdss) 40 V
- Drive Voltage (Max Rds On, Min Rds On) 5V
- Technology GaNFET (Gallium Nitride)
- Current - Continuous Drain (Id) @ 25°C 33A (Ta)
- Gate Charge (Qg) (Max) @ Vgs 11.6 nC @ 5 V
- Vgs (Max) +6V, -5V
- Vgs(th) (Max) @ Id 2.5V @ 9mA
- Input Capacitance (Ciss) (Max) @ Vds 1200 pF @ 20 V
- Rds On (Max) @ Id, Vgs 4mOhm @ 33A, 5V
