FQB27N25TM-F085
Sanyo Semiconductor/onsemi
Copyright@2026 All Rights Reserved
粤ICP备19162589号
Technical Support Cluster Technology
Friend links
Sitemap
Specifications
- Mounting Type Surface Mount
- Package / Case Die
- Supplier Device Package Die
- Operating Temperature -40°C ~ 150°C (TJ)
- FET Type N-Channel
- Drain to Source Voltage (Vdss) 40 V
- Vgs(th) (Max) @ Id 2.5V @ 250µA
- Drive Voltage (Max Rds On, Min Rds On) 5V
- Technology GaNFET (Gallium Nitride)
- Vgs (Max) +6V, -4V
- Current - Continuous Drain (Id) @ 25°C 4A (Ta)
- Rds On (Max) @ Id, Vgs 110mOhm @ 500mA, 5V
- Gate Charge (Qg) (Max) @ Vgs 0.45 nC @ 5 V
- Input Capacitance (Ciss) (Max) @ Vds 52 pF @ 20 V
