FQB27N25TM-F085
Sanyo Semiconductor/onsemi
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FCH190N65F-F155
Part Number：
FCH190N65F-F155
Category：
Single FETs, MOSFETs
Manufacturer：
Sanyo Semiconductor/onsemi
Description：
MOSFET N-CH 650V 20.6A TO247
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
Specifications
- Mounting Type Through Hole
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Vgs (Max) ±20V
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Operating Temperature -55°C ~ 150°C (TJ)
- Drain to Source Voltage (Vdss) 650 V
- Package / Case TO-247-3
- Supplier Device Package TO-247-3
- Power Dissipation (Max) 208W (Tc)
- Gate Charge (Qg) (Max) @ Vgs 78 nC @ 10 V
- Rds On (Max) @ Id, Vgs 190mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id 5V @ 2mA
- Current - Continuous Drain (Id) @ 25°C 20.6A (Tc)
- Input Capacitance (Ciss) (Max) @ Vds 3225 pF @ 100 V
