FQB27N25TM-F085
Sanyo Semiconductor/onsemi
Copyright@2026 All Rights Reserved
粤ICP备19162589号
Technical Support Cluster Technology
Friend links
Sitemap
FCPF650N80Z
Part Number：
FCPF650N80Z
Category：
Single FETs, MOSFETs
Manufacturer：
Sanyo Semiconductor/onsemi
Description：
MOSFET N-CH 800V 8A TO220F
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
Specifications
- Mounting Type Through Hole
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Vgs (Max) ±20V
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Operating Temperature -55°C ~ 150°C (TJ)
- Package / Case TO-220-3 Full Pack
- Drain to Source Voltage (Vdss) 800 V
- Gate Charge (Qg) (Max) @ Vgs 35 nC @ 10 V
- Supplier Device Package TO-220F-3
- Current - Continuous Drain (Id) @ 25°C 8A (Tc)
- Power Dissipation (Max) 30.5W (Tc)
- Rds On (Max) @ Id, Vgs 650mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id 4.5V @ 800µA
- Input Capacitance (Ciss) (Max) @ Vds 1565 pF @ 100 V
