FQB27N25TM-F085
Sanyo Semiconductor/onsemi
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FDI045N10A-F102
Part Number：
FDI045N10A-F102
Category：
Single FETs, MOSFETs
Manufacturer：
Sanyo Semiconductor/onsemi
Description：
MOSFET N-CH 100V 120A I2PAK
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
Specifications
- Mounting Type Through Hole
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Current - Continuous Drain (Id) @ 25°C 120A (Tc)
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 100 V
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Operating Temperature -55°C ~ 175°C (TJ)
- Vgs(th) (Max) @ Id 4V @ 250µA
- Package / Case TO-262-3 Long Leads, I2PAK, TO-262AA
- Supplier Device Package TO-262 (I2PAK)
- Gate Charge (Qg) (Max) @ Vgs 74 nC @ 10 V
- Rds On (Max) @ Id, Vgs 4.5mOhm @ 100A, 10V
- Input Capacitance (Ciss) (Max) @ Vds 5270 pF @ 50 V
- Power Dissipation (Max) 263W (Tc)
