English
中文
English
Russian
Home
Classification
Brand
News
Inquiry
About Us
Contact Us
Copyright@2026 All Rights Reserved
粤ICP备19162589号
Technical Support Cluster Technology
Friend links
PHYLINA ELECTRONICS
arrow
mouser
digikey
Sitemap
English
中文
English
Russian
Home
Classification
Brand
News
Inquiry
About Us
Contact Us
Home
/
Products
/
Discrete Semiconductor Products
/
Transistors
/
IGBTs
/
Single IGBTs
/
FGH40T65UPD
FGH40T65UPD
Part Number:
FGH40T65UPD
Category:
Single IGBTs
Manufacturer:
Sanyo Semiconductor/onsemi
Description:
IGBT TRENCH/FS 650V 80A TO247-3
Packaging:
-
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Documents
Documents
Documents
Quantity
Add to RFQ
Specifications
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 175°C (TJ)
IGBT Type
Trench Field Stop
Input Type
Standard
Current - Collector (Ic) (Max)
80 A
Package / Case
TO-247-3
Supplier Device Package
TO-247-3
Voltage - Collector Emitter Breakdown (Max)
650 V
Reverse Recovery Time (trr)
43 ns
Current - Collector Pulsed (Icm)
120 A
Vce(on) (Max) @ Vge, Ic
2.3V @ 15V, 40A
Power - Max
268 W
Gate Charge
177 nC
Switching Energy
1.59mJ (on), 580µJ (off)
Td (on/off) @ 25°C
20ns/144ns
Test Condition
400V, 40A, 7Ohm, 15V
Recommended Models
FGH75T65SHD-F155
Sanyo Semiconductor/onsemi
FGH60T65SHD-F155
Sanyo Semiconductor/onsemi
FGH40T65SHD-F155
Sanyo Semiconductor/onsemi
FGA25S125P-SN00337
Sanyo Semiconductor/onsemi
IRGS4715DPBF
IR (Infineon Technologies)
IRGP4790PBF
IR (Infineon Technologies)
IRGP4790-EPBF
IR (Infineon Technologies)
IRGP4790DPBF
IR (Infineon Technologies)
IRGP4790D-EPBF
IR (Infineon Technologies)
IRGP4760PBF
IR (Infineon Technologies)
3004073820 / 3004073823
86-13823752328
jack@hk-east.com
86-13823752328
Add to RFQ
Back to top