English
中文
English
Russian
Home
Classification
Brand
News
Inquiry
About Us
Contact Us
Copyright@2026 All Rights Reserved
粤ICP备19162589号
Technical Support Cluster Technology
Sitemap
English
中文
English
Russian
Home
Classification
Brand
News
Inquiry
About Us
Contact Us
Home
/
Products
/
Discrete Semiconductor Products
/
Transistors
/
FETs, MOSFETs
/
Single FETs, MOSFETs
/
GA10JT12-247
GA10JT12-247
Part Number:
GA10JT12-247
Category:
Single FETs, MOSFETs
Manufacturer:
GeneSiC Semiconductor
Description:
TRANS SJT 1200V 10A TO247AB
Packaging:
-
ROHS Status:
-
Currency:
USD
PDF:
Documents
Documents
Quantity
Add to RFQ
Specifications
Mounting Type
Through Hole
Operating Temperature
175°C (TJ)
Package / Case
TO-247-3
Technology
SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)
1200 V
Power Dissipation (Max)
170W (Tc)
Supplier Device Package
TO-247AB
Current - Continuous Drain (Id) @ 25°C
10A (Tc)
Rds On (Max) @ Id, Vgs
140mOhm @ 10A
Recommended Models
FQB27N25TM-F085
Sanyo Semiconductor/onsemi
FDMA6676PZ
Sanyo Semiconductor/onsemi
FQPF9P25YDTU
Sanyo Semiconductor/onsemi
DMP2021UFDF-13
Zetex Semiconductors (Diodes Inc.)
DMN6075S-13
Zetex Semiconductors (Diodes Inc.)
DMN3053L-13
Zetex Semiconductors (Diodes Inc.)
IRL7486MTRPBF
IR (Infineon Technologies)
IRFI7446GPBF
IR (Infineon Technologies)
IRFI7440GPBF
IR (Infineon Technologies)
IRFH7194TRPBF
IR (Infineon Technologies)
3004073820 / 3004073823
86-13823752328
jack@hk-east.com
86-13823752328
Add to RFQ
Back to top