GA10JT12-247

GA10JT12-247

Part Number: GA10JT12-247
Category: Single FETs, MOSFETs
Manufacturer: GeneSiC Semiconductor
Description: TRANS SJT 1200V 10A TO247AB
Packaging: -
ROHS Status: -
Currency: USD

Specifications

  • Mounting Type Through Hole
  • Operating Temperature 175°C (TJ)
  • Package / Case TO-247-3
  • Technology SiC (Silicon Carbide Junction Transistor)
  • Drain to Source Voltage (Vdss) 1200 V
  • Power Dissipation (Max) 170W (Tc)
  • Supplier Device Package TO-247AB
  • Current - Continuous Drain (Id) @ 25°C 10A (Tc)
  • Rds On (Max) @ Id, Vgs 140mOhm @ 10A