FQB27N25TM-F085
Sanyo Semiconductor/onsemi
GA10JT12-263
Part Number：
GA10JT12-263
Category：
Single FETs, MOSFETs
Manufacturer：
GeneSiC Semiconductor
Description：
TRANS SJT 1200V 25A
Packaging：
-
ROHS Status:
Yes
Currency:
USD
Specifications
- Mounting Type Surface Mount
- Operating Temperature 175°C (TJ)
- Current - Continuous Drain (Id) @ 25°C 25A (Tc)
- Technology SiC (Silicon Carbide Junction Transistor)
- Drain to Source Voltage (Vdss) 1200 V
- Power Dissipation (Max) 170W (Tc)
- Input Capacitance (Ciss) (Max) @ Vds 1403 pF @ 800 V
- Rds On (Max) @ Id, Vgs 120mOhm @ 10A
