FGH75T65SHD-F155
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GT60N321(Q)
Part Number：
GT60N321(Q)
Category：
Single IGBTs
Manufacturer：
Toshiba Electronic Devices and Storage Corporation
Description：
IGBT 1000V 60A 170W TO3P LH
Packaging：
-
ROHS Status:
-
Currency:
USD
PDF:
Documents
Specifications
- Mounting Type Through Hole
- Operating Temperature 150°C (TJ)
- Input Type Standard
- Reverse Recovery Time (trr) 2.5 µs
- Current - Collector (Ic) (Max) 60 A
- Current - Collector Pulsed (Icm) 120 A
- Voltage - Collector Emitter Breakdown (Max) 1000 V
- Power - Max 170 W
- Package / Case TO-3PL
- Supplier Device Package TO-3P(LH)
- Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 60A
- Td (on/off) @ 25°C 330ns/700ns
