FQB27N25TM-F085
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IPB80N06S2LH5ATMA4
Part Number：
IPB80N06S2LH5ATMA4
Category：
Single FETs, MOSFETs
Manufacturer：
IR (Infineon Technologies)
Description：
MOSFET N-CH 55V 80A TO263-3
Packaging：
-
ROHS Status:
Yes
Currency:
USD
Specifications
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Vgs (Max) ±20V
- Operating Temperature -55°C ~ 175°C (TJ)
- Drain to Source Voltage (Vdss) 55 V
- Vgs(th) (Max) @ Id 2V @ 250µA
- Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Power Dissipation (Max) 300W (Tc)
- Current - Continuous Drain (Id) @ 25°C 80A (Tc)
- Supplier Device Package PG-TO263-3-2
- Input Capacitance (Ciss) (Max) @ Vds 5000 pF @ 25 V
- Gate Charge (Qg) (Max) @ Vgs 190 nC @ 10 V
- Rds On (Max) @ Id, Vgs 4.7mOhm @ 80A, 10V
