FQB27N25TM-F085
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IPW65R041CFDFKSA1
Part Number：
IPW65R041CFDFKSA1
Category：
Single FETs, MOSFETs
Manufacturer：
IR (Infineon Technologies)
Description：
MOSFET N-CH 650V 68.5A TO247-3
Packaging：
-
ROHS Status:
Yes
Currency:
USD
Specifications
- Mounting Type Through Hole
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Vgs (Max) ±20V
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Operating Temperature -55°C ~ 150°C (TJ)
- Drain to Source Voltage (Vdss) 650 V
- Gate Charge (Qg) (Max) @ Vgs 300 nC @ 10 V
- Package / Case TO-247-3
- Supplier Device Package PG-TO247-3-1
- Power Dissipation (Max) 500W (Tc)
- Current - Continuous Drain (Id) @ 25°C 68.5A (Tc)
- Rds On (Max) @ Id, Vgs 41mOhm @ 33.1A, 10V
- Vgs(th) (Max) @ Id 4.5V @ 3.3mA
- Input Capacitance (Ciss) (Max) @ Vds 8400 pF @ 100 V
