English
中文
English
Russian
Home
Classification
Brand
News
Inquiry
About Us
Contact Us
Copyright@2026 All Rights Reserved
粤ICP备19162589号
Technical Support Cluster Technology
Friend links
PHYLINA ELECTRONICS
arrow
mouser
digikey
Sitemap
English
中文
English
Russian
Home
Classification
Brand
News
Inquiry
About Us
Contact Us
Home
/
Products
/
Discrete Semiconductor Products
/
Transistors
/
IGBTs
/
Single IGBTs
/
IRG7PH35UD-EP
IRG7PH35UD-EP
Part Number:
IRG7PH35UD-EP
Category:
Single IGBTs
Manufacturer:
IR (Infineon Technologies)
Description:
IGBT 1200V 50A COPAK247
Packaging:
-
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Documents
Documents
Documents
Quantity
Add to RFQ
Specifications
Mounting Type
Through Hole
Power - Max
180 W
Operating Temperature
-55°C ~ 150°C (TJ)
IGBT Type
Trench
Voltage - Collector Emitter Breakdown (Max)
1200 V
Current - Collector (Ic) (Max)
50 A
Vce(on) (Max) @ Vge, Ic
2.2V @ 15V, 20A
Input Type
Standard
Package / Case
TO-247-3
Supplier Device Package
TO-247AD
Current - Collector Pulsed (Icm)
60 A
Reverse Recovery Time (trr)
105 ns
Test Condition
600V, 20A, 10Ohm, 15V
Gate Charge
85 nC
Switching Energy
1.06mJ (on), 620µJ (off)
Td (on/off) @ 25°C
30ns/160ns
Recommended Models
FGH75T65SHD-F155
Sanyo Semiconductor/onsemi
FGH60T65SHD-F155
Sanyo Semiconductor/onsemi
FGH40T65SHD-F155
Sanyo Semiconductor/onsemi
FGA25S125P-SN00337
Sanyo Semiconductor/onsemi
IRGS4715DPBF
IR (Infineon Technologies)
IRGP4790PBF
IR (Infineon Technologies)
IRGP4790-EPBF
IR (Infineon Technologies)
IRGP4790DPBF
IR (Infineon Technologies)
IRGP4790D-EPBF
IR (Infineon Technologies)
IRGP4760PBF
IR (Infineon Technologies)
3004073820 / 3004073823
86-13823752328
jack@hk-east.com
86-13823752328
Add to RFQ
Back to top