FQB27N25TM-F085
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IXTT110N10L2
Part Number：
IXTT110N10L2
Category：
Single FETs, MOSFETs
Manufacturer：
Littelfuse / IXYS RF
Description：
MOSFET N-CH 100V 110A TO268
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specifications
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 100 V
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Operating Temperature -55°C ~ 150°C (TJ)
- Vgs(th) (Max) @ Id 4.5V @ 250µA
- Current - Continuous Drain (Id) @ 25°C 110A (Tc)
- Power Dissipation (Max) 600W (Tc)
- Package / Case TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
- Supplier Device Package TO-268AA
- Gate Charge (Qg) (Max) @ Vgs 260 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 10500 pF @ 25 V
- Rds On (Max) @ Id, Vgs 18mOhm @ 55A, 10V
