English
中文
English
Russian
Home
Classification
Brand
News
Inquiry
About Us
Contact Us
Copyright@2026 All Rights Reserved
粤ICP备19162589号
Technical Support Cluster Technology
Friend links
PHYLINA ELECTRONICS
arrow
mouser
digikey
Sitemap
English
中文
English
Russian
Home
Classification
Brand
News
Inquiry
About Us
Contact Us
Home
/
Products
/
Discrete Semiconductor Products
/
Transistors
/
IGBTs
/
Single IGBTs
/
IXXR110N65B4H1
IXXR110N65B4H1
Part Number:
IXXR110N65B4H1
Category:
Single IGBTs
Manufacturer:
Littelfuse / IXYS RF
Description:
IGBT 650V 150A 455W ISOPLUS247
Packaging:
Tube
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Quantity
RFQ Now
Add to RFQ
Specifications
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 175°C (TJ)
Input Type
Standard
IGBT Type
PT
Package / Case
TO-247-3
Reverse Recovery Time (trr)
100 ns
Voltage - Collector Emitter Breakdown (Max)
650 V
Supplier Device Package
ISOPLUS247™
Current - Collector (Ic) (Max)
150 A
Power - Max
455 W
Switching Energy
2.2mJ (on), 1.05mJ (off)
Gate Charge
183 nC
Td (on/off) @ 25°C
38ns/156ns
Test Condition
400V, 55A, 2Ohm, 15V
Current - Collector Pulsed (Icm)
460 A
Vce(on) (Max) @ Vge, Ic
2.2V @ 15V, 110A
Recommended Models
FGH75T65SHD-F155
Sanyo Semiconductor/onsemi
FGH60T65SHD-F155
Sanyo Semiconductor/onsemi
FGH40T65SHD-F155
Sanyo Semiconductor/onsemi
FGA25S125P-SN00337
Sanyo Semiconductor/onsemi
IRGS4715DPBF
IR (Infineon Technologies)
IRGP4790PBF
IR (Infineon Technologies)
IRGP4790-EPBF
IR (Infineon Technologies)
IRGP4790DPBF
IR (Infineon Technologies)
IRGP4790D-EPBF
IR (Infineon Technologies)
IRGP4760PBF
IR (Infineon Technologies)
3004073820 / 3004073823
86-13823752328
jack@hk-east.com
86-13823752328
Add to RFQ
Back to top