English
中文
English
Russian
Home
Classification
Brand
News
Inquiry
About Us
Contact Us
Copyright@2026 All Rights Reserved
粤ICP备19162589号
Technical Support Cluster Technology
Friend links
PHYLINA ELECTRONICS
arrow
mouser
digikey
Sitemap
English
中文
English
Russian
Home
Classification
Brand
News
Inquiry
About Us
Contact Us
Home
/
Products
/
Discrete Semiconductor Products
/
Transistors
/
IGBTs
/
Single IGBTs
/
IXXX200N65B4
IXXX200N65B4
Part Number:
IXXX200N65B4
Category:
Single IGBTs
Manufacturer:
Littelfuse / IXYS RF
Description:
IGBT PT 650V 370A PLUS247-3
Packaging:
Tube
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Quantity
RFQ Now
Add to RFQ
Specifications
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 175°C (TJ)
Input Type
Standard
IGBT Type
PT
Test Condition
400V, 100A, 1Ohm, 15V
Voltage - Collector Emitter Breakdown (Max)
650 V
Supplier Device Package
PLUS247™-3
Package / Case
TO-247-3 Variant
Power - Max
1150 W
Current - Collector (Ic) (Max)
370 A
Current - Collector Pulsed (Icm)
1000 A
Vce(on) (Max) @ Vge, Ic
1.7V @ 15V, 160A
Switching Energy
4.4mJ (on), 2.2mJ (off)
Gate Charge
553 nC
Td (on/off) @ 25°C
62ns/245ns
Recommended Models
FGH75T65SHD-F155
Sanyo Semiconductor/onsemi
FGH60T65SHD-F155
Sanyo Semiconductor/onsemi
FGH40T65SHD-F155
Sanyo Semiconductor/onsemi
FGA25S125P-SN00337
Sanyo Semiconductor/onsemi
IRGS4715DPBF
IR (Infineon Technologies)
IRGP4790PBF
IR (Infineon Technologies)
IRGP4790-EPBF
IR (Infineon Technologies)
IRGP4790DPBF
IR (Infineon Technologies)
IRGP4790D-EPBF
IR (Infineon Technologies)
IRGP4760PBF
IR (Infineon Technologies)
3004073820 / 3004073823
86-13823752328
jack@hk-east.com
86-13823752328
Add to RFQ
Back to top