FQB27N25TM-F085
Sanyo Semiconductor/onsemi
Copyright@2026 All Rights Reserved
粤ICP备19162589号
Technical Support Cluster Technology
Friend links
Sitemap
R6035ENZ1C9
Part Number：
R6035ENZ1C9
Category：
Single FETs, MOSFETs
Manufacturer：
ROHM Semiconductor
Description：
MOSFET N-CH 600V 35A TO247
Packaging：
-
ROHS Status:
Yes
Currency:
USD
Specifications
- Mounting Type Through Hole
- Operating Temperature 150°C (TJ)
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Vgs (Max) ±20V
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Drain to Source Voltage (Vdss) 600 V
- Package / Case TO-247-3
- Vgs(th) (Max) @ Id 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs 110 nC @ 10 V
- Supplier Device Package TO-247
- Power Dissipation (Max) 120W (Tc)
- Current - Continuous Drain (Id) @ 25°C 35A (Tc)
- Rds On (Max) @ Id, Vgs 102mOhm @ 18.1A, 10V
- Input Capacitance (Ciss) (Max) @ Vds 2720 pF @ 25 V
