FQB27N25TM-F085
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RCD075N19TL
Part Number：
RCD075N19TL
Category：
Single FETs, MOSFETs
Manufacturer：
ROHM Semiconductor
Description：
MOSFET N-CH 190V 7.5A CPT3
Packaging：
-
ROHS Status:
Yes
Currency:
USD
Specifications
- Mounting Type Surface Mount
- Operating Temperature 150°C (TJ)
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Vgs (Max) ±30V
- Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
- Vgs(th) (Max) @ Id 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs 30 nC @ 10 V
- Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
- Input Capacitance (Ciss) (Max) @ Vds 1100 pF @ 25 V
- Supplier Device Package CPT3
- Current - Continuous Drain (Id) @ 25°C 7.5A (Tc)
- Drain to Source Voltage (Vdss) 190 V
- Rds On (Max) @ Id, Vgs 336mOhm @ 3.8A, 10V
- Power Dissipation (Max) 850mW (Ta), 20W (Tc)
