English
中文
English
Russian
Home
Classification
Brand
News
Inquiry
About Us
Contact Us
Copyright@2026 All Rights Reserved
粤ICP备19162589号
Technical Support Cluster Technology
Friend links
PHYLINA ELECTRONICS
arrow
mouser
digikey
Sitemap
English
中文
English
Russian
Home
Classification
Brand
News
Inquiry
About Us
Contact Us
Home
/
Products
/
Discrete Semiconductor Products
/
Transistors
/
IGBTs
/
Single IGBTs
/
RGT80TS65DGC11
RGT80TS65DGC11
Part Number:
RGT80TS65DGC11
Category:
Single IGBTs
Manufacturer:
ROHM Semiconductor
Description:
IGBT 650V 70A 234W TO-247N
Packaging:
Tube
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Documents
Documents
Documents
Quantity
RFQ Now
Add to RFQ
Specifications
Mounting Type
Through Hole
Operating Temperature
-40°C ~ 175°C (TJ)
IGBT Type
Trench Field Stop
Input Type
Standard
Package / Case
TO-247-3
Voltage - Collector Emitter Breakdown (Max)
650 V
Current - Collector (Ic) (Max)
70 A
Supplier Device Package
TO-247N
Current - Collector Pulsed (Icm)
120 A
Test Condition
400V, 40A, 10Ohm, 15V
Reverse Recovery Time (trr)
58 ns
Vce(on) (Max) @ Vge, Ic
2.1V @ 15V, 40A
Gate Charge
79 nC
Power - Max
234 W
Td (on/off) @ 25°C
34ns/119ns
Recommended Models
FGH75T65SHD-F155
Sanyo Semiconductor/onsemi
FGH60T65SHD-F155
Sanyo Semiconductor/onsemi
FGH40T65SHD-F155
Sanyo Semiconductor/onsemi
FGA25S125P-SN00337
Sanyo Semiconductor/onsemi
IRGS4715DPBF
IR (Infineon Technologies)
IRGP4790PBF
IR (Infineon Technologies)
IRGP4790-EPBF
IR (Infineon Technologies)
IRGP4790DPBF
IR (Infineon Technologies)
IRGP4790D-EPBF
IR (Infineon Technologies)
IRGP4760PBF
IR (Infineon Technologies)
3004073820 / 3004073823
86-13823752328
jack@hk-east.com
86-13823752328
Add to RFQ
Back to top