FQB27N25TM-F085
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SCT30N120
Part Number：
SCT30N120
Category：
Single FETs, MOSFETs
Manufacturer：
STMicroelectronics
Description：
SICFET N-CH 1200V 40A HIP247
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
Specifications
- Mounting Type Through Hole
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 40A (Tc)
- Package / Case TO-247-3
- Power Dissipation (Max) 270W (Tc)
- Drain to Source Voltage (Vdss) 1200 V
- Drive Voltage (Max Rds On, Min Rds On) 20V
- Technology SiCFET (Silicon Carbide)
- Vgs (Max) +25V, -10V
- Operating Temperature -55°C ~ 200°C (TJ)
- Rds On (Max) @ Id, Vgs 100mOhm @ 20A, 20V
- Supplier Device Package HiP247™
- Gate Charge (Qg) (Max) @ Vgs 105 nC @ 20 V
- Input Capacitance (Ciss) (Max) @ Vds 1700 pF @ 400 V
- Vgs(th) (Max) @ Id 2.6V @ 1mA (Typ)
