FQB27N25TM-F085
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SIS612EDNT-T1-GE3
Part Number：
SIS612EDNT-T1-GE3
Category：
Single FETs, MOSFETs
Manufacturer：
Vishay / Siliconix
Description：
MOSFET N-CH 20V 50A PPAK1212-8S
Packaging：
-
ROHS Status:
Yes
Currency:
USD
Specifications
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Operating Temperature -55°C ~ 150°C (TJ)
- Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
- Drain to Source Voltage (Vdss) 20 V
- Vgs (Max) ±12V
- Gate Charge (Qg) (Max) @ Vgs 70 nC @ 10 V
- Current - Continuous Drain (Id) @ 25°C 50A (Tc)
- Vgs(th) (Max) @ Id 1.2V @ 1mA
- Supplier Device Package PowerPAK® 1212-8S
- Package / Case PowerPAK® 1212-8S
- Power Dissipation (Max) 3.7W (Ta), 52W (Tc)
- Rds On (Max) @ Id, Vgs 3.9mOhm @ 14A, 4.5V
- Input Capacitance (Ciss) (Max) @ Vds 2060 pF @ 10 V
