FQB27N25TM-F085
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SPP20N65C3XKSA1
Part Number：
SPP20N65C3XKSA1
Category：
Single FETs, MOSFETs
Manufacturer：
IR (Infineon Technologies)
Description：
MOSFET N-CH 650V 20.7A TO220-3
Packaging：
Tube
ROHS Status:
Yes
Currency:
USD
Specifications
- Mounting Type Through Hole
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Vgs (Max) ±20V
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Operating Temperature -55°C ~ 150°C (TJ)
- Package / Case TO-220-3
- Drain to Source Voltage (Vdss) 650 V
- Input Capacitance (Ciss) (Max) @ Vds 2400 pF @ 25 V
- Supplier Device Package PG-TO220-3
- Power Dissipation (Max) 208W (Tc)
- Gate Charge (Qg) (Max) @ Vgs 114 nC @ 10 V
- Vgs(th) (Max) @ Id 3.9V @ 1mA
- Current - Continuous Drain (Id) @ 25°C 20.7A (Tc)
- Rds On (Max) @ Id, Vgs 190mOhm @ 13.1A, 10V
