FQB27N25TM-F085
Sanyo Semiconductor/onsemi
Copyright@2026 All Rights Reserved
粤ICP备19162589号
Technical Support Cluster Technology
Friend links
Sitemap
SQM120P06-07L_GE3
Part Number：
SQM120P06-07L_GE3
Category：
Single FETs, MOSFETs
Manufacturer：
Vishay / Siliconix
Description：
MOSFET P-CH 60V 120A TO263
Packaging：
Tape & Reel (TR)
ROHS Status:
Yes
Currency:
USD
Specifications
- Mounting Type Surface Mount
- Technology MOSFET (Metal Oxide)
- Current - Continuous Drain (Id) @ 25°C 120A (Tc)
- Drain to Source Voltage (Vdss) 60 V
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Vgs (Max) ±20V
- Vgs(th) (Max) @ Id 2.5V @ 250µA
- Operating Temperature -55°C ~ 175°C (TJ)
- FET Type P-Channel
- Supplier Device Package TO-263 (D2PAK)
- Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Power Dissipation (Max) 375W (Tc)
- Gate Charge (Qg) (Max) @ Vgs 270 nC @ 10 V
- Rds On (Max) @ Id, Vgs 6.7mOhm @ 30A, 10V
- Input Capacitance (Ciss) (Max) @ Vds 14280 pF @ 25 V
