English
中文
English
Russian
Home
Classification
Brand
News
Inquiry
About Us
Contact Us
Copyright@2026 All Rights Reserved
粤ICP备19162589号
Technical Support Cluster Technology
Friend links
PHYLINA ELECTRONICS
arrow
mouser
digikey
Sitemap
English
中文
English
Russian
Home
Classification
Brand
News
Inquiry
About Us
Contact Us
Home
/
Products
/
Discrete Semiconductor Products
/
Transistors
/
IGBTs
/
Single IGBTs
/
STGWT30H65FB
STGWT30H65FB
Part Number:
STGWT30H65FB
Category:
Single IGBTs
Manufacturer:
STMicroelectronics
Description:
IGBT 650V 30A 260W TO3PL
Packaging:
Tube
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Documents
Quantity
RFQ Now
Add to RFQ
Specifications
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 175°C (TJ)
IGBT Type
Trench Field Stop
Supplier Device Package
TO-3P
Package / Case
TO-3P-3, SC-65-3
Input Type
Standard
Voltage - Collector Emitter Breakdown (Max)
650 V
Current - Collector (Ic) (Max)
30 A
Vce(on) (Max) @ Vge, Ic
2V @ 15V, 30A
Current - Collector Pulsed (Icm)
120 A
Power - Max
260 W
Gate Charge
149 nC
Test Condition
400V, 30A, 10Ohm, 15V
Td (on/off) @ 25°C
37ns/146ns
Switching Energy
151µJ (on), 293µJ (off)
Recommended Models
FGH75T65SHD-F155
Sanyo Semiconductor/onsemi
FGH60T65SHD-F155
Sanyo Semiconductor/onsemi
FGH40T65SHD-F155
Sanyo Semiconductor/onsemi
FGA25S125P-SN00337
Sanyo Semiconductor/onsemi
IRGS4715DPBF
IR (Infineon Technologies)
IRGP4790PBF
IR (Infineon Technologies)
IRGP4790-EPBF
IR (Infineon Technologies)
IRGP4790DPBF
IR (Infineon Technologies)
IRGP4790D-EPBF
IR (Infineon Technologies)
IRGP4760PBF
IR (Infineon Technologies)
3004073820 / 3004073823
86-13823752328
jack@hk-east.com
86-13823752328
Add to RFQ
Back to top