FQB27N25TM-F085
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STH80N10F7-2
Part Number：
STH80N10F7-2
Category：
Single FETs, MOSFETs
Manufacturer：
STMicroelectronics
Description：
MOSFET N-CH 100V 80A H2PAK-2
Packaging：
-
ROHS Status:
Yes
Currency:
USD
Specifications
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 100 V
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Operating Temperature -55°C ~ 175°C (TJ)
- Gate Charge (Qg) (Max) @ Vgs 45 nC @ 10 V
- Vgs(th) (Max) @ Id 4.5V @ 250µA
- Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Power Dissipation (Max) 110W (Tc)
- Current - Continuous Drain (Id) @ 25°C 80A (Tc)
- Supplier Device Package H2PAK-2
- Rds On (Max) @ Id, Vgs 9.5mOhm @ 40A, 10V
- Input Capacitance (Ciss) (Max) @ Vds 3100 pF @ 50 V
