FQB27N25TM-F085
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TPCF8A01(TE85L)
Part Number：
TPCF8A01(TE85L)
Category：
Single FETs, MOSFETs
Manufacturer：
Toshiba Electronic Devices and Storage Corporation
Description：
MOSFET N-CH 20V 3A VS-8
Packaging：
Tape & Reel (TR)
ROHS Status:
-
Currency:
USD
Specifications
- Mounting Type Surface Mount
- Operating Temperature 150°C (TJ)
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 20 V
- Vgs (Max) ±12V
- Current - Continuous Drain (Id) @ 25°C 3A (Ta)
- FET Feature Schottky Diode (Isolated)
- Power Dissipation (Max) 330mW (Ta)
- Vgs(th) (Max) @ Id 1.2V @ 200µA
- Input Capacitance (Ciss) (Max) @ Vds 590 pF @ 10 V
- Gate Charge (Qg) (Max) @ Vgs 7.5 nC @ 5 V
- Drive Voltage (Max Rds On, Min Rds On) 2V, 4.5V
- Package / Case 8-SMD, Flat Leads
- Supplier Device Package VS-8 (2.9x1.5)
- Rds On (Max) @ Id, Vgs 49mOhm @ 1.5A, 4.5V
