FQB27N25TM-F085
Sanyo Semiconductor/onsemi
Copyright@2026 All Rights Reserved
粤ICP备19162589号
Technical Support Cluster Technology
Friend links
Sitemap
TPWR8503NL,L1Q
Part Number：
TPWR8503NL,L1Q
Category：
Single FETs, MOSFETs
Manufacturer：
Toshiba Electronic Devices and Storage Corporation
Description：
MOSFET N-CH 30V 150A 8DSOP
Packaging：
Tape & Reel (TR)
ROHS Status:
Yes
Currency:
USD
Specifications
- Mounting Type Surface Mount
- Operating Temperature 150°C (TJ)
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 30 V
- Package / Case 8-PowerWDFN
- Current - Continuous Drain (Id) @ 25°C 150A (Tc)
- Gate Charge (Qg) (Max) @ Vgs 74 nC @ 10 V
- Rds On (Max) @ Id, Vgs 0.85mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id 2.3V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds 6900 pF @ 15 V
- Power Dissipation (Max) 800mW (Ta), 142W (Tc)
- Supplier Device Package 8-DSOP Advance
